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IRFB52N15D Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A) | |||
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PD - 94357
SMPS MOSFET
IRFB52N15D
IRFS52N15D
IRFSL52N15D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS RDS(on) max
ID
150V
0.032â¦
60A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB52N15D
D2Pak
TO-262
IRFS52N15D IRFSL52N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screwÂ
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface Â
Junction-to-AmbientÂ
Junction-to-AmbientÂ
Notes  through  are on page 11
www.irf.com
Max.
60
43
240
3.8
320
2.1
± 30
5.5
-55 to + 175
300 (1.6mm from case )
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
âââ
0.50
âââ
âââ
Max.
0.47
âââ
62
40
Units
°C/W
1
12/12/01
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