IRFB4710 Datasheet, PDF (4/11 Pages) International Rectifier – Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)

IRFB/IRFS/IRFL4710
10000
8000
6000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
2000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 45A
16
12
V_DS = 80V
V_DS = 50V
V_DS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175 ^° C
10
T_J = 25^° C
1
0.1
0.0
V_GS = 0 V
0.4
0.8
1.2
1.6
V_SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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