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| IRFB4710 Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A) | |||
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IRFB/IRFS/IRFL4710
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
âââ
âââ
3.5
âââ
âââ
âââ
âââ
âââ âââ V
0.11 âââ V/°C
0.011 0.014 â¦
âââ 5.5 V
âââ 1.0 µA
âââ 250
âââ 100
nA
âââ -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 45A Â
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
35 âââ âââ S VDS = 50V, ID = 45A
Qg
Total Gate Charge
âââ 110 170
ID = 45A
Qgs
Gate-to-Source Charge
âââ 43 âââ nC VDS = 50V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 40 âââ
VGS = 10V,
td(on)
Turn-On Delay Time
âââ 35 âââ
VDD = 50V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 130 âââ ns ID = 45A
âââ 41 âââ
RG = 4.5â¦
tf
Fall Time
âââ 38 âââ
VGS = 10V Â
Ciss
Input Capacitance
âââ 6160 âââ
VGS = 0V
Coss
Output Capacitance
âââ 440 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 250 âââ pF Æ = 1.0MHz
Coss
Output Capacitance
âââ 1580 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Output Capacitance
âââ 280 âââ
VGS = 0V, VDS = 80V, Æ = 1.0MHz
Coss eff. Effective Output Capacitance
âââ 430 âââ
VGS = 0V, VDS = 0V to 80V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
190
45
20
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 75
A showing the
âââ âââ 300
integral reverse
G
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 45A, VGS = 0V Â
âââ 74 110 ns TJ = 25°C, IF = 45A
âââ 180 260 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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