IRFB4710 Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A)

Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
PD- 94080
IRFB4710
IRFS4710
IRFSL4710
HEXFET^® Power MOSFET
V_DSS R_DS(on) max
I_D
100V
0.014Ω
75A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB4710
D²Pak
IRFS4710
TO-262
IRFSL4710
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
75
53
300
3.8
200
1.4
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
Notes  through ‡ are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.74
–––
62
40
Units
°C/W
1
3/16/01