IRFB4410ZPBF_15 Datasheet, PDF (4/12 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1000
100 _{TJ = 175°C}
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
80
60
40
20
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10 0 10 20 30 40 50 60 70 80 90 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
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1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
10msec
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1000
900
800
700
ID
TOP 6.4A
9.4A
BOTTOM 58A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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April 25, 2014