IRFB4410ZPBF_15 Datasheet, PDF (2/12 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V_(BR)DSS
Drain-to-Source Breakdown Voltage
100
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
V_GS(th)
Gate Threshold Voltage
2.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
R_G
Internal Gate Resistance
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
140
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Q_g - Q_gd)
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
hà Effective Output Capacitance (Energy Related) –––
g Effective Output Capacitance (Time Related)
–––
Typ.
–––
0.12
7.2
–––
–––
–––
–––
–––
0.70
Typ.
–––
83
19
27
56
16
52
43
57
4820
340
170
420
690
Max. Units
Conditions
–––
–––
9.0
V V_GS = 0V, I_D = 250μA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 58A
4.0 V V_DS = V_GS, I_D = 150μA
20 μA V_DS = 100V, V_GS = 0V
250
V_DS = 80V, V_GS = 0V, T_J = 125°C
100
-100
–––
nA V_GS = 20V
V_GS = -20V
Ω
Max. Units
Conditions
––– S V_DS = 10V, I_D = 58A
120 nC I_D = 58A
–––
–––
V_DS =50V
f V_GS = 10V
f I_D = 58A, V_DS =0V, V_GS = 10V
––– ns V_DD = 65V
–––
I_D = 58A
–––
–––
f ^{RG =2.7Ω}
V_GS = 10V
––– pF V_GS = 0V
–––
V_DS = 50V
–––
ƒ = 1.0MHz, See Fig.5
–––
–––
h V_GS = 0V, V_DS = 0V to 80V , See Fig.11
gà V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 97 A MOSFET symbol
D
showing the
––– ––– 390 A integral reverse
G
p-n junction diode.
S
f ––– ––– 1.3 V T_J = 25°C, I_S = 58A, V_GS = 0V
––– 38 57 ns T_J = 25°C
V_R = 85V,
––– 46 69
T_J = 125°C
––– 53 80 nC T_J = 25°C
f ^{IF = 58A}
di/dt = 100A/μs
––– 82 120
T_J = 125°C
––– 2.5 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.143mH
R_G = 25Ω, I_AS = 58A, V_GS =10V. Part not recommended for use
above this value.
ƒ I_SD ≤ 58A, di/dt ≤ 610A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
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April 25, 2014