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IRFB4410ZPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
100V
7.2m:
G
max. 9.0m:
S ID (Silicon Limited)
97A
D
D
D
DS
G
TO-220AB
IRFB4410ZPbF
DS
G
D2Pak
IRFS4410ZPbF
DS
G
TO-262
IRFSL4410ZPbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFB4410ZPbF
IRFSL4410ZPbF
IRFS4410ZPbF
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Tape and Reel Right
800
Orderable Part Number
IRFB4410ZPbF
IRFSL4410ZPbF
IRFS4410ZPbF
IRFS4410ZTRLPbF
IRFS4410ZTRRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
d Single Pulse Avalanche Energy
IAR
EAR
Avalanche Current
f Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
RθJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
j Junction-to-Ambient, TO-220
ij Junction-to-Ambient (PCB Mount) , D2Pak
Max.
97
69
390
230
1.5
± 20
16
-55 to + 175
300
x x 10lb in (1.1N m)
242
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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April 25, 2014