IRFB4227PBF_15 Datasheet, PDF (4/8 Pages) International Rectifier – Advanced Process Technology

IRFB4227PbF
1400
1200
1000
L = 220nH
C= 0.4µF
C= 0.3µF
C= 0.2µF
800
600
400
200
0
25
50
75
100
125
150
Temperature (°C)
Fig 7. Typical E_PULSE vs.Temperature
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
2000 ^Coss
1000.0
100.0
10.0
TJ = 175°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
20
ID= 46A
16
12
VDS= 160V
VDS= 100V
VDS= 40V
8
4
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
70
60
50
40
30
20
10
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 11. Maximum Drain Current vs. Case Temperature
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1µsec
100µsec
10µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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