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IRFB4227PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Process Technology
PD - 97035D
IRFB4227PbF
Features
l Advanced Process Technology
Key Parameters
l Key Parameters Optimized for PDP Sustain,
VDS max
200
V
Energy Recovery and Pass Switch Applications VDS (Avalanche) typ.
240
V
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
RDS(ON) typ. @ 10V
19.7
m:
and Pass Switch Applications
IRP max @ TC= 100°C
130
A
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
TJ max
175
°C
Reliable Operation
D
D
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
G
and Reliability
l Class-D Audio Amplifier 300W-500W
S
S
D
G
TO-220AB
(Half-bridge)
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
g Repetitive Peak Current
PD @TC = 25°C
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
f Junction-to-Case
Case-to-Sink, Flat, Greased Surface
f Junction-to-Ambient
Notes  through † are on page 8
www.irf.com
Max.
±30
65
46
260
130
330
190
2.2
-40 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/10/07