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| IRFB4227PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Advanced Process Technology | |||
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IRFB4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 âââ âââ V VGS = 0V, ID = 250µA
âÎVDSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ 170 âââ mV/°C Reference to 25°C, ID = 1mA
e âââ 19.7 24 m⦠VGS = 10V, ID = 46A
VGS(th)
Gate Threshold Voltage
3.0 âââ 5.0
V VDS = VGS, ID = 250µA
âVGS(th)/âTJ
Gate Threshold Voltage Coefficient
âââ -13 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 200V, VGS = 0V
âââ âââ 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
49 âââ âââ S VDS = 25V, ID = 46A
âââ 70
98
e nC VDD = 100V, ID = 46A, VGS = 10V
Qgd
Gate-to-Drain Charge
âââ 23 âââ
td(on)
Turn-On Delay Time
âââ 33 âââ ns VDD = 100V
tr
Rise Time
âââ 20 âââ
ID = 46A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 21 âââ
âââ 31 âââ
RG = 2.5â¦
e VGS = 10V
tst
Shoot Through Blocking Time
100 âââ âââ ns VDD = 160V, VGS = 15V, RG= 4.7â¦
EPULSE
Energy per Pulse
âââ 570 âââ
L = 220nH, C= 0.4µF, VGS = 15V
µJ VDS = 160V, RG= 4.7â¦, TJ = 25°C
âââ 910 âââ
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7â¦, TJ = 100°C
Ciss
Input Capacitance
âââ 4600 âââ
VGS = 0V
Coss
Output Capacitance
âââ 460 âââ pF VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 91 âââ
Æ = 1.0MHz,
Coss eff.
Effective Output Capacitance
âââ 360 âââ
VGS = 0V, VDS = 0V to 160V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
from package
G
and center of die contact
S
Avalanche Characteristics
EAS
EAR
VDS(Avalanche)
IAS
Parameter
d Single Pulse Avalanche Energy
 Repetitive Avalanche Energy
ÃÂ Repetitive Avalanche Voltage
Ãd Avalanche Current
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Typ.
Max.
Units
âââ
140
mJ
âââ
33
mJ
240
âââ
V
âââ
39
A
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
100
430
Max. Units
Conditions
65
MOSFET symbol
A showing the
260
integral reverse
p-n junction diode.
1.3
e V TJ = 25°C, IS = 46A, VGS = 0V
150 ns TJ = 25°C, IF = 46A, VDD = 50V
e 640 nC di/dt = 100A/µs
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