IRFB3806PBF Datasheet, PDF (4/11 Pages) International Rectifier – HEXFET

Power MOSFET

IRFB/S/SL3806PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.0
-10 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
1
Tc = 25°C
DC
Tj = 175°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
80
Id = 5mA
75
70
65
60
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
300
ID
250
TOP 2.8A
5.1A
BOTTOM 25A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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