IRFB3806PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET

Power MOSFET

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97310
IRFB3806PbF
IRFS3806PbF
IRFSL3806PbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^ID
60V
12.6mΩ
15.8mΩ
43A
D
D
D
S
D
G
TO-220AB
IRFB3806PbF
S
G
D²Pak
IRFS3806PbF
S
D
G
TO-262
IRFSL3806PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V}
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy d}
I_AR
Avalanche Current c
E_AR
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case j
R_θCS
Case-to-Sink, Flat Greased Surface, TO-220
R_θJA
Junction-to-Ambient, TO-220 ij
R_θJA
Junction-to-Ambient (PCB Mount) , D²Pak ij
G
Gate
D
Drain
Max.
43
31
170
71
0.47
± 20
24
-55 to + 175
300
10lbxin (1.1Nxm)
S
Source
Units
A
W
W/°C
V
V/ns
°C
73
mJ
25
A
7.1
mJ
Typ.
–––
0.50
–––
–––
Max.
2.12
–––
62
40
Units
°C/W
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1
02/29/08