IRFB3806PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET

Power MOSFET

IRFB/S/SL3806PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.075 ––– V/°C Reference to 25°C, I_D = 5mAc
––– 12.6 15.8 mΩ V_GS = 10V, I_D = 25A f
2.0 ––– 4.0 V V_DS = V_GS, I_D = 50µA
––– ––– 20 µA V_DS = 60V, V_GS = 0V
––– ––– 250
V_DS = 48V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
41 ––– –––
––– 22 30
––– 5.0 –––
––– 6.3 –––
––– 28.3 –––
S V_DS = 10V, I_D = 25A
nC I_D = 25A
V_DS = 30V
V_GS = 10V f
I_D = 25A, V_DS =0V, V_GS = 10V
R_G(int)
Internal Gate Resistance
––– 0.79 –––
t_d(on)
Turn-On Delay Time
––– 6.3 –––
t_r
Rise Time
––– 40 –––
t_d(off)
Turn-Off Delay Time
––– 49 –––
t_f
Fall Time
––– 47 –––
C_iss
Input Capacitance
––– 1150 –––
C_oss
Output Capacitance
––– 130 –––
C_rss
Reverse Transfer Capacitance
––– 67 –––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)h} ––– 190 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)g} ––– 230 –––
Ω
ns V_DD = 39V
I_D = 25A
R_G = 20Ω
V_GS = 10V f
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 60V h
V_GS = 0V, V_DS = 0V to 60V g
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) c
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 43 A MOSFET symbol
D
showing the
––– ––– 170
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
––– 22 33
––– 26 39
––– 17 26
––– 24 36
––– 1.4 –––
V T_J = 25°C, I_S = 25A, V_GS = 0V f
ns T_J = 25°C
V_R = 51V,
T_J = 125°C
I_F = 25A
nC T_J = 25°C
di/dt = 100A/µs f
T_J = 125°C
A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.23mH
R_G = 25Ω, I_AS = 25A, V_GS =10V. Part not recommended for
use above this value.
ƒ I_SD ≤ 25A, di/dt ≤ 1580A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
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