IRFB3607PBF Datasheet, PDF (4/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL3607PbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.20
1.00
0.80
0.60
0.40
0.20
0.00
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
500
450
ID
TOP 5.6A
400
11A
350
BOTTOM 46A
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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