IRFB3607PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL3607PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
75 ––– –––
––– 0.096 –––
––– 7.34 9.0
2.0 ––– 4.0
––– ––– 20
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 5mAd
mΩ VGS = 10V, ID = 46A ^g
V V_DS = V_GS, I_D = 100µA
µA V_DS = 75V, V_GS = 0V
I_GSS
Gate-to-Source Forward Leakage
––– ––– 250
––– ––– 100
V_DS = 60V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q_g
Q_gs
Q_gd
Q_sync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
170 ––– –––
––– 56 84
––– 13 –––
––– 16 –––
––– 40 –––
S V_DS = 50V, I_D = 46A
nC I_D = 46A
V_DS = 38V
V_GS = 10V g
I_D = 46A, V_DS =0V, V_GS = 10V
R_G(int)
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 0.55 –––
––– 16 –––
––– 110 –––
––– 43 –––
––– 96 –––
––– 3070 –––
––– 280 –––
––– 130 –––
Ω
ns V_DD = 49V
I_D = 46A
R_G = 6.8Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)j} ––– 380 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)h} ––– 610 –––
V_GS = 0V, V_DS = 0V to 60V j
V_GS = 0V, V_DS = 0V to 60V h
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) d
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 80c A MOSFET symbol
D
showing the
––– ––– 310
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 46A, V_GS = 0V g
––– 33 50 ns T_J = 25°C
V_R = 64V,
––– 39 59
T_J = 125°C
I_F = 46A
––– 32 48 nC T_J = 25°C
di/dt = 100A/µs g
––– 47 71
T_J = 125°C
––– 1.9 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction ^{„ ISD ≤ 46A, di/dt ≤ 1920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.}
temperature. Note that current limitations arising from heating of the ^{… Pulse width ≤ 400µs; duty cycle ≤ 2%.}
device leads may occur with some lead mounting arrangements.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
‚ Repetitive rating; pulse width limited by max. junction
as C_oss while V_DS is rising from 0 to 80% V_DSS.
temperature.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.12mH
R_G = 25Ω, I_AS = 46A, V_GS =10V. Part not recommended for use
above this value.
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
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