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IRFB3607PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97308A
IRFB3607PbF
IRFS3607PbF
IRFSL3607PbF
HEXFET® Power MOSFET
D
VDSS
RDS(on) typ.
max.
S
ID
75V
7.34m:
9.0m:
80A
D
S
D
G
TO-220AB
IRFB3607PbF
D
D
S
G
D2Pak
IRFS3607PbF
S
D
G
TO-262
IRFSL3607PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e
IAR
Avalanche Current c
EAR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case k
RθCS
Case-to-Sink, Flat Greased Surface, TO-220
RθJA
Junction-to-Ambient, TO-220 j
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak jk
www.irf.com
G
Gate
D
Drain
S
Source
Max.
80c
56c
310
140
0.96
± 20
27
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/°C
V
V/ns
°C
120
mJ
46
A
14
mJ
Typ.
–––
0.50
–––
–––
Max.
1.045
–––
62
40
Units
°C/W
1
02/22/08