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IRFB3207ZGPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFETPower MOSFET
IRFB3207ZGPbF
1000
TJ = 175°C
100
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
180
160
Limited By Package
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10msec
10
DC
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
700
ID
600
TOP 17A
30A
500
BOTTOM 102A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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