IRFB3207ZGPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET

Power MOSFET

IRFB3207ZGPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 –––
––– 0.091
––– 3.3
–––
–––
4.1
V V_GS = 0V, I_D = 250µA
d V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 75A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 150µA
R_G(int)
I_DSS
I_GSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.8 ––– Ω
––– ––– 20 µA V_DS = 75V, V_GS = 0V
––– ––– 250
V_DS = 75V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA V_GS = 20V
––– ––– -100
V_GS = -20V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
280 ––– –––
Q_g
Total Gate Charge
––– 120 170
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 27 –––
––– 33 –––
Q_sync
t_d(on)
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
––– 87 –––
––– 20 –––
t_r
Rise Time
––– 68 –––
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 55 –––
––– 68 –––
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 6920 –––
––– 600 –––
C_rss
Reverse Transfer Capacitance
––– 270 –––
ià ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 770 –––
h ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 960 –––
S V_DS = 50V, I_D = 75A
I_D = 75A
g nC VDS = 38V
V_GS = 10V
I_D = 75A, V_DS =0V, V_GS = 10V
V_DD = 49V
ns
I_D = 75A
g ^{RG = 2.7Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz
ià V_GS = 0V, V_DS = 0V to 60V
h V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 170
MOSFET symbol
D
A ^{showing the}
670
integral reverse
G
––– –––
p-n junction diode.
S
––– ––– 1.3
g V T_J = 25°C, I_S = 75A, V_GS = 0V
––– 36 54 ns T_J = 25°C
V_R = 64V,
––– 41 62
T_J = 125°C
––– 50 75 nC T_J = 25°C
g ^{IF = 75A}
di/dt = 100A/µs
––– 67 100
T_J = 125°C
––– 2.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ I_SD ≤ 75A, di/dt ≤ 1730A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.033mH
R_G = 25Ω, I_AS = 102A, V_GS =10V. Part not recommended for use
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
above this value.
2
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