IRFB3207ZGPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET

Power MOSFET

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits _G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
l Halogen-Free
PD - 96201
IRFB3207ZGPbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
75V
3.3m:
4.1m:
c 170A
120A
D
G
Gate
S
D
G
TO-220AB
IRFB3207ZGPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C
I_DM
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e E_{AS (Thermally limited)} Single Pulse Avalanche Energy
Ãd I_AR
Avalanche Current
d E_AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220
www.irf.com
Max.
™ 170
™ 120
120
670
300
2.0
± 20
16
-55 to + 175
300
x x 10lbf in (1.1N m)
170
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
12/05/08