IRFB3207 Datasheet, PDF (4/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF/B/S/SL3207
1000.0
100.0 ^{TJ = 175°C}
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
LIMITED BY PACKAGE
150
100
50
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
DC
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
100
90
80
70
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
4000
3000
ID
TOP
12A
16A
BOTTOM 75A
2000
1000
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
www.irf.com