IRFB3207 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
G
l Worldwide Best R_DS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
PD - 96893A
IRFB3207
IRFS3207
IRFSL3207
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S I_D
75V
3.6m:
4.5m:
180A
G DS
TO-220AB
IRFB3207
G DS
D²Pak
IRFS3207
G DS
TO-262
IRFSL3207
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
dV/dt
Gate-to-Source Voltage
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current c
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220 k
R_θJA
Junction-to-Ambient (PCB Mount) , D²Pak jk
www.irf.com
Max.
180c
130c
720
330
2.2
± 20
5.8
-55 to + 175
300
10lbxin (1.1Nxm)
910
See Fig. 14, 15, 16a, 16b,
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
11/3/04