IRFB3207 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF/B/S/SL3207
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
Min.
75
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.69
3.6
–––
–––
–––
–––
–––
1.2
Max. Units
Conditions
––– V V_GS = 0V, I_D = 250µA
––– V/°C Reference to 25°C, I_D = 1mAd
4.5 mΩ V_GS = 10V, I_D = 75A g
4.0 V V_DS = V_GS, I_D = 250µA
20 µA V_DS = 75V, V_GS = 0V
250
V_DS = 75V, V_GS = 0V, T_J = 125°C
200 nA V_GS = 20V
-200
–––
V_GS = -20V
Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150 ––– –––
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
––– 180 260
––– 48 –––
––– 68 –––
––– 29 –––
––– 120 –––
––– 68 –––
––– 74 –––
––– 7600 –––
C_oss
Output Capacitance
––– 710 –––
C_rss
Reverse Transfer Capacitance
––– 390 –––
C_oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 920 –––
C_oss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1010 –––
S V_DS = 50V, I_D = 75A
nC I_D = 75A
V_DS = 60V
V_GS = 10V g
ns V_DD = 48V
I_D = 75A
R_G = 2.6Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 60V j, See Fig.11
V_GS = 0V, V_DS = 0V to 60V h, See Fig. 5
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) di
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180c A MOSFET symbol
D
showing the
––– ––– 720
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 75A, V_GS = 0V g
––– 42 63 ns T_J = 25°C
V_R = 64V,
––– 49 74
T_J = 125°C
––– 65 98 nC T_J = 25°C
I_F = 75A
di/dt = 100A/µs g
––– 92 140
T_J = 125°C
––– 2.6 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.33mH
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not recommended for use
mended footprint and soldering techniques refer to application note #AN-994.
above this value.
‰ R_θ is measured at T_J approximately 90°C
„ I_SD ≤ 75A, di/dt ≤ 500A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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