IRFB20N50KPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB20N50KPbF
100000
10000
1000
100
10
1
VGS = 0V, f = 1 MHZ
C _iss = C _gs + C _gd , C _ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _IDID==221A0A
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE13
0
0
20
40
60
80
100
120
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
10.0
TJ = 150°C
1.0
0.1
0.2
TJ = 25°C
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10m s ec
1
10
100
1000 10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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