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| IRFB20N50KPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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PD - 94984
IRFB20N50KPbF
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
l Lead-Free
VDSS
500V
HEXFET® Power MOSFET
RDS(on) typ.
ID
0.21â¦
20A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low RDS(on)
Absolute Maximum Ratings
TO-220AB
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Max.
20
12
80
280
2.2
± 30
6.9
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
330
20
28
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.50
âââ
Max.
0.45
âââ
58
Units
°C/W
www.irf.com
1
2/5/04
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