 English |
|
|
|
|
|
|
|
| IRFB20N50KPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
| |||
| ◁ |
IRFB20N50KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
500 âââ âââ V
âââ 0.61 âââ V/°C
âââ 0.21 0.25 â¦
3.0 âââ 5.0 V
âââ âââ 50 µA
âââ âââ 250 µA
âââ âââ 100
nA
âââ âââ -100
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
11 âââ âââ S VDS = 50V, ID = 12A
Qg
Total Gate Charge
âââ âââ 110
ID = 20A
Qgs
Gate-to-Source Charge
âââ âââ 33 nC VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 54
VGS = 10V, See Fig. 6 and 13 Â
td(on)
Turn-On Delay Time
âââ 22 âââ
VDD = 250V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 74 âââ ns ID = 20A
âââ 45 âââ
RG = 7.5â¦
âââ 33 âââ
VGS = 10V,See Fig. 10 Â
Ciss
Input Capacitance
âââ 2870 âââ
VGS = 0V
Coss
Output Capacitance
âââ 320 âââ
VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 34 âââ pF Æ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
âââ 3480 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
âââ 85 âââ
âââ 160 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 20
A showing the
integral reverse
G
âââ âââ 80
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 20A, VGS = 0V Â
âââ 520 780 ns TJ = 25°C, IF = 20A
âââ 5.3 8.0 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 1.6mH, RG = 25â¦,
IAS = 20A,
 ISD ⤠20A, di/dt ⤠350A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese