IRFB17N60K Datasheet, PDF (4/8 Pages) International Rectifier – SMPS MOSFET

IRFB17N60K
100000
10000
1000
100
10
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 17A
16
12
VDS= 480V
VDS= 300V
VDS= 120V
8
4
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
10.0
TJ = 150°C
1.0
0.1
0.0
TJ = 25°C
VGS = 0V
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
100
1000 10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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