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| IRFB17N60K Datasheet, PDF (2/8 Pages) International Rectifier – SMPS MOSFET | |||
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IRFB17N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.60 âââ V/°C Reference to 25°C, ID = 1mA
âââ 0.35 0.42 ⦠VGS = 10V, ID = 10A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50 µA VDS = 600V, VGS = 0V
âââ âââ 250 µA VDS = 480V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
5.9 âââ âââ
Qg
Total Gate Charge
âââ âââ 99
Qgs
Gate-to-Source Charge
âââ âââ 32
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 47
td(on)
Turn-On Delay Time
âââ 25 âââ
tr
Rise Time
âââ 82 âââ
td(off)
Turn-Off Delay Time
âââ 38 âââ
tf
Fall Time
âââ 32 âââ
Ciss
Input Capacitance
âââ 2700 âââ
Coss
Output Capacitance
âââ 240 âââ
Crss
Reverse Transfer Capacitance
âââ 21 âââ
Coss
Output Capacitance
âââ 2950 âââ
Coss
Output Capacitance
âââ 67 âââ
Coss eff. Effective Output Capacitance
âââ 120 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 10A
ID = 17A
VDS = 480V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 300V
ID = 17A
RG = 7.5â¦
VGS = 10V,See Fig. 10 Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 2.3mH, RG = 25â¦,
IAS = 17A,
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 17
A showing the
integral reverse
G
âââ âââ 68
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 17A, VGS = 0V Â
âââ 520 780 ns TJ = 25°C, IF = 17A
âââ 5620 8430 nC di/dt = 100A/µs Â
âââ 580 870 ns TJ = 125°C, IF = 17A
âââ 6470 9700 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 ISD ⤠17A, di/dt ⤠380A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
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