IRFB17N60K Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET

PD - 94578
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
V_DSS
600V
IRFB17N60K
HEXFET^® Power MOSFET
R_DS(on) typ.
I_D
0.35Ω
17A
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
E_AS
I_AR
E_AR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Max.
17
11
68
340
2.7
± 30
11
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
–––
–––
Max.
330
17
34
Units
mJ
A
mJ
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
°C/W
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1
11/19/02