IRF9410PBF Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET® Power MOSFET

IRF9410PbF
2.0 _{ID = 7.0A}
0.05
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.04
V_GS = 4.5V
0.03
0.02
0
V_GS = 10V
A
5
10
15
20
25
I_D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
0.14
0.12
0.10
0.08
0.06
0.04
I_D = 7.0A
0.02
0.00
3
A
6
9
12
15
V_GS -Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
200
I_D
TOP
2.1A
3.7A
160
BOTTOM 4.6A
120
80
40
0
A
25
50
75
100
125
150
Starting T_J, Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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