IRF9410PBF Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET® Power MOSFET

IRF9410PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
30 ––– –––
––– 0.024 –––
––– 0.024 0.030
––– 0.032 0.040
––– 0.037 0.050
1.0 ––– –––
––– 14 –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
––– 18 27
––– 2.4 3.6
––– 4.9 7.4
––– 7.3 15
––– 8.3 17
––– 23 46
––– 17 34
––– 550 –––
––– 260 –––
––– 100 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
pF
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 7.0A „
V_GS = 5.0V, I_D = 4.0A „
V_GS = 4.5V, I_D = 3.5A „
V_DS = V_GS, I_D = 250µA
V_DS = 15V, I_D = 7.0A
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 55°C
V_GS = 20V
V_GS = -20V
I_D = 2.0A
V_DS = 15V
V_GS = 10V, See Fig. 10 „
V_DD = 25V
I_D = 1.0A
R_G = 6.0Ω, V_GS = 10V
R_D = 25Ω „
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 2.8
––– ––– 37
MOSFET symbol
showing the
A _{integral reverse}
p-n junction diode.
D
G
S
––– 0.78 1.0
––– 40 80
––– 63 130
V T_J = 25°C, I_S = 2.0A, V_GS = 0V ƒ
ns T_J = 25°C, I_F = 2.0A
nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 6.6mH
R_G = 25Ω, I_AS = 4.6A.
… Surface mounted on FR-4 board, t ≤ 10sec.
ƒ I_SD ≤ 4.6A, di/dt ≤ 120A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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