IRF9410PBF Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET® Power MOSFET

IRF9410PbF
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
3.0V
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
100
10
T_J = 150°C
1
T_J = 25°C
V_DS = 10V
20µs PULSE WIDTH
1
A
3.0
3.5
4.0
4.5
5.0
5.5
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.1
0.4
V_GS = 0V _A
0.6
0.8
1.0
1.2
V_SD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3