IRF8852TRPBF Datasheet, PDF (4/10 Pages) International Rectifier –
Ultra Low On-Resistance

IRF8852PbF
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
14.0
12.0
ID= 7.8A
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
4
8
12 16 20 24
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.1
0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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