IRF8852TRPBF Datasheet, PDF (1/10 Pages) International Rectifier –
Ultra Low On-Resistance

PD - 96246
IRF8852PbF
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
V_DSS
25V
HEXFET^® Power MOSFET
R_DS(on) max
: 11.3m @V_GS = 10V
: 15.4m @V_GS = 4.5V
Id
7.8A
6.2A
Description
HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that
International Rectifier is well known for, provides the
designer with an extremely efficient and reliable
device for battery and load management.
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TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space is
at a premium. The low profile (<1.2mm) allows it to fit easily
into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
V_GS
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
25
7.8
6.2
62.4
1.0
0.64
0.01
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
f Junction-to-Ambient
Typ.
–––
–––
Max.
53
125
Notes  through … are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Units
°C/W
1
07/30/09