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IRF8852TRPBF Datasheet, PDF (2/10 Pages) International Rectifier –  Ultra Low On-Resistance
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IRF8852PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage
25 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
0.02
9.2
12.5
–––
11.3
15.4
V/°C Reference to 25°C, ID = 1mA
e mΩ VGS = 10V, ID = 7.8A
e VGS = 4.5V, ID = 6.2A
Gate Threshold Voltage
1.35 1.8 2.35 V VDS = VGS, ID = 25µA
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
gfs
Qg
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
19 ––– –––
––– 9.5 –––
––– 17.4 26.1
––– 3.1 –––
––– 2.9 –––
––– 2.8 –––
––– 11.4 –––
––– 10.9 –––
––– 70.8 –––
––– 28.9 –––
––– 1151 –––
––– 295 –––
––– 134 –––
S VDS = 10V, ID = 7.8A
nC ID = 7.8A,VDS= 13V, VGS = 4.5V
ID = 7.8A
nC VDS = 13V
VGS = 10V
Ω
e VDD = 13V, VGS = 10V
ns ID = 1.0A
RD =13 Ω
RG =30 Ω
VGS = 0V
pF VDS = 20V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
™ Avalanche Current
Typ.
–––
–––
Max.
6.5
7.8
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
32
17
Max. Units
Conditions
MOSFET symbol
1.3
A showing the
integral reverse
62.4
1.0
e p-n junction diode.
V TJ = 25°C, IS = 1.3A, VGS = 0V
48
26
e ns TJ = 25°C, IF = 1.3A, VDD = 20V
nC di/dt = 100A/µs
2
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