IRF8788TRPBF Datasheet, PDF (4/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF8788PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
16
ID= 19A
12
VDS= 24V
VDS= 15V
8
4
0
0 20 40 60 80 100 120
Qg, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
TJ = 25°C
10
1.0
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
10
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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