IRF8788TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF8788PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
ΔV_GS(th)
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_g
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
95
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.024
2.3
3.04
1.80
-6.59
–––
–––
–––
–––
–––
44
12
4.7
14
13.3
18.7
22
0.54
23
24
23
11
5720
980
450
–––
–––
2.8
3.8
2.35
–––
V V_GS = 0V, I_D = 250μA
V/°C Reference to 25°C, I_D = 1mA
e _mΩ V_GS = 10V, I_D = 24A
e V_GS = 4.5V, I_D = 19A
V V_DS = V_GS, I_D = 100μA
mV/°C
1.0
150
100
-100
–––
66
μA ^{VDS = 24V, VGS = 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
S V_DS = 15V, I_D = 19A
–––
V_DS = 15V
––– _nC V_GS = 4.5V
–––
I_D = 19A
–––
See Figs. 17a & 17b
–––
–––
1.09
nC V_DS = 16V, V_GS = 0V
Ω
–––
V_DD = 15V, V_GS = 4.5V
––– _ns I_D = 19A
–––
R_G = 1.8Ω
–––
See Fig. 15a & 15b
–––
V_GS = 0V
––– pF V_DS = 15V
–––
ƒ = 1.0MHz
Parameter
E_AS
I_AR
d Single Pulse Avalanche Energy
™ Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
230
19
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– _3.1
A ^{MOSFET symbol}
D
(Body Diode)
showing the
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– ₁₉₀
––– ––– 1.0
––– ––– 0.75
integral reverse
G
A
p-n junction diode.
S
e V T_J = 25°C, I_S = 19A, V_GS = 0V
e V T_J = 25°C, I_S = 2.2A, V_GS = 0V
––– 24 36 ns T_J = 25°C, I_F = 19A, V_DD = 15V
e ––– 33 50 nC di/dt = 230A/μs
t_on
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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