IRF8788TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

PD - 97137A
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
IRF8788PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
Qg
30V 2.8m:@V_GS = 10V 44nC
Benefits
l Very Low Gate Charge
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Description
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±20
24
19
190
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_θJL
R_θJA
g Junction-to-Drain Lead
fg Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
8/18/08