IRF830ASPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRF830AS/LPbF
10000
1000
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C_gd , C_ds SHO RT E D
C_rss = C _gd
C_oss = C_ds + C _gd
C _iss
100
C _oss
10
C rss
1
A
1
10
100
1000
V _DS , D ra in-to-S ource V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 5.0A}
16
12
 ^{VDS = 400V}
V_DS = 250V
V_DS = 100V
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
 T_J = 150^° C
1
 T_J = 25 ^° C
0.1
0.2
 ^VGS ^{= 0 V}
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
 10us
10
 100us
 1ms
1
 10ms
 ^{TC = 25°C}
T_J = 150°C
Single Pulse
0.1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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