IRF830ASPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRF830AS/LPbF
100
^TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 4.5V
1
0.1
4.5V
0.01
0.1
 20µs PULSE WIDTH
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
 100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1
4.5V
0.1
1
 20µs PULSE WIDTH
TJ = 150 ^°C
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
 T_J = 150^°C
 T_J = 25 ^°C
1
0.1
4.0
 V DS= 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ ID = 5.0A}
2.0
1.5
1.0
0.5
 ^VGS ^{= 10V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3