IRF830ASPBF Datasheet, PDF (10/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRF830AS/LPbF
D²Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4.10 (.161)
3.90 (.153)
F E E D D IR E C TI O N 1 .8 5 (.0 7 3 )
1 .6 5 ( .0 6 5 )
TRL
10.90 (.429)
10.70 (.421)
1.60 (.06 3)
1.50 (.05 9)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069 )
1.25 (.049 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4 .7 2 (.1 36 )
4 .5 2 (.1 78 )
FEED DIRE CTION
13 .5 0 (.5 32 )
12 .8 0 (.5 04 )
27 .4 0 (1.07 9)
23 .9 0 (.9 41 )
4
330.00
(14.173)
MAX.
6 0.00 (2 .36 2)
M IN .
NOTES :
1. COMFORM S TO EIA-418.
2. C O N T R O L LIN G D IM E N SIO N : M ILL IM E T ER .
3. D IM EN S IO N M E A SU R E D @ HU B .
4. IN C L U D ES F LA N G E D IST O R T IO N @ O U TE R ED G E.
2 6 .4 0 (1 .03 9)
2 4 .4 0 (.9 61 )
3
30.40 (1.197)
MAX.
4
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting T_J = 25°C, L = 18mH
R_G = 25Ω, I_AS = 5.0A. (See Figure 12)
ƒ I_SD ≤ 5.0A, di/dt ≤ 370A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
† Uses IRF830A data and test conditions
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
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