IRF7MS2907 Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA)

IRF7MS2907
20000
16000
12000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
8000
4000
0
1
C _oss
C _rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 45A}
16
 ^{VDS = 60V}
V_DS = 37V
V_DS = 15V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
200
300
400
500
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
100µs
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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