IRF7MS2907 Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA)

IRF7MS2907
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 150°C
100
TJ = 25°C
10
VDS = 25V
1
20µs PU₁₅LSE WIDTH
3 3.5 4 4.5 5 5.5 6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ ID = 45A}
2.0
1.5
1.0
0.5
 ^VGS ^{= 10V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3