IRF7832 Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7832
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
ID= 16A
5
4
VDS= 24V
VDS= 15V
3
2
1
0
0
10
20
30
40
50
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
100
TJ = 150°C
10
1
TJ = 25°C
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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