IRF7832 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 94594D
IRF7832
Applications
l Synchronous MOSFET for Notebook
V_DSS
Processor Power
l Synchronous Rectifier MOSFET for
30V
Isolated DC-DC Converters in
Networking Systems
S
Benefits
S
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
S
l Fully Characterized Avalanche Voltage
G
and Current
l 20V V_GS Max. Gate Rating
HEXFET^® Power MOSFET
R_DS(on) max
Qg
: 4.0m @V_GS = 10V 34nC
AA
1
8
D
2
7
D
3
6
D
4
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
R_θJA
Junction-to-Drain Lead
f Junction-to-Ambient
Notes  through „ are on page 10
www.irf.com
Max.
30
± 20
20
16
160
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
1/14/04