IRF7832 Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7832
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1
0.1
0.01
0.1
2.25V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
10
2.25V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1
0
2.0
VDS = 15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 16A
VGS = 4.5V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3