IRF7831UPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7831UPbF
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 12A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
10.0
TJ = 150°C
1.0
0.1
0.2
TJ = 25°C
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
1.0
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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