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IRF7831UPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7831UPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
âââ
2.5
3.0
1.35
âââ
âââ
âââ
âââ
âââ
97
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.025
3.1
3.7
âââ
- 5.7
âââ
âââ
âââ
âââ
âââ
40
12
3.1
11
14
14
22
1.4
18
10
17
5.3
6240
980
390
âââ
âââ
3.6
4.4
2.35
âââ
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 20A
e VGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
âââ
60
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 12V
VGS = -12V
S VDS = 15V, ID = 16A
âââ
VDS = 15V
âââ nC VGS = 4.5V
âââ
ID = 16A
âââ
See Fig. 16
âââ
âââ nC VDS = 16V, VGS = 0V
2.5 â¦
âââ
e VDD = 15V, VGS = 4.5V
âââ
ID = 16A
âââ ns Clamped Inductive Load
âââ
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Typ.
âââ
âââ
Max.
100
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 2.5
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 170
âââ âââ 1.2
âââ 42 62
âââ 31 47
integral reverse
p-n junction diode.
e V TJ = 25°C, IS = 16A, VGS = 0V
ns TJ = 25°C, IF = 16A, VDD = 25V
e nC di/dt = 100A/µs
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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