IRF7831UPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7831UPbF
1000
100
10
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
1
0.1
0.01
0.1
20µs PULSE WIDTH
2.25V _{Tj = 25°C}
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
100
10
VGS
TOP
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
1
0.1
0.1
2.25V
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
TJ = 150°C
10.0
1.0
0.1
2.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 20A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3