IRF7828PBF Datasheet, PDF (4/6 Pages) International Rectifier – HEXFET® Power MOSFET for DC-DC Converters

IRF7828PbF
100.0
TJ = 150°C
10.0
TJ = 25°C
1.0
0.1
2.0
VDS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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