IRF7828PBF Datasheet, PDF (3/6 Pages) International Rectifier – HEXFET® Power MOSFET for DC-DC Converters

2.0
ID = 14A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 1. Normalized On-Resistance
Vs. Temperature
IRF7828PbF
12
ID= 10A
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0
5
10
15
20
QG Total Gate Charge (nC)
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
Fig 3. On-Resistance Vs. Gate Voltage
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10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3